CMOS memory
英
美 [ˈsimoʊs ˈmeməri]
网络 互补金属氧化物半导体存储器
双语例句
- Generally, this memory is called CMOS, although it's not strictly required that it actually be implemented using that technology.
通常来说，这种内存都称为CMOS，尽管它们并非严格要求使用这种技术来实现。 - Standard CMOS Process-based OTP Memory Design and Research
基于标准CMOS工艺的OTP存储器的设计与研究 - This paper introduced the realization procedure of IDD spectrum graphics. Test and experiment data proved that CMOS memory IDD spectrum graphics test is work.
通过对CMOS存储器IDD频谱图形测试过程的介绍，测试及试验数据证实CMOS存储器IDD频谱图：形测试是可行的。 - An adiabatic static CMOS memory circuit to have ability in information recovery by means of analyzing equivalent circuit, choosing parameter and realizing complete function of sequential circuit is presented.
通过等效电路分析、考虑参数选取和整体时序电路的实现，提出具有信息恢复能力的静态绝热CMOS记忆电路。 - The first, we analyze the system operation theory of CMOS image sensor with pixel level ADC ( A/ D Converter). It is made up of three sections: pixel array, clock signal generator and SAM ( Sequential Access Memory).
首先，我们对像素级A／D转换型图像传感器的系统工作原理进行了分析，是由像素阵列、时钟信号产生器和SAM（顺序读写存储器）三部分构成的。 - The SONOS memory offers advantages of better endurance, low-voltage low-power operation and a simple fabrication process compatible with standard CMOS technology.
除了小的器件尺寸之外，SONOS器件还具有很多优势，如更好的抗擦写能力（Endurance）、低操作电压和低功率，且工艺过程简单并与标准CMOS工艺兼容。 - This paper introduces a software method of protecting CMOS in the microcomputer by storing a program in the free memory of EE ROM on the motherboard.
本文介绍了一种采用纯软件、利用主板EEROM剩余空间存放程序而实现的微机CMOS数据保护方法。 - The objective of this paper is the hardware design for one of the CMOS memory. It is used into the VLSI for real-time alternant 3D-shadow picture and colour picture.
在本文中将要介绍一种CMOS存储器的设计，用于可以支持实时图形交互三维阴影和彩色图像的VLSI机中。 - The design of interface and program between ARM CMOS chip and FLASH memory plays an important role in the implementation of an embedded system based on ARM.
ARM芯片与FLASH存储器的接口与编程是实现基于ARM的嵌入式系统的一个重要环节。 - A fast access time is achieved by using six-transistor CMOS memory cell, latched sense amplifier, and high-speed decoder circuit.
存储器采用六管CMOS存储单元、锁存器型敏感放大器和高速译码电路，以期达到最快的存取时间。 - CMOS image sensor consists of image array logic registers, memory, timer pulse generator and converter.
CMOS图像传感器包括图像阵列逻辑寄存器、存储器、定时脉冲发生器和转换器在内的全部系统。 - Study of CMOS Super Capability Static Random Access Memory
CMOS超大容量静态随机存储器研究 - CMOS Memory IDD Spectrum Graphics Test
CMOS存储器IDD频谱图形测试 - This paper introduces the type selection of CMOS chip, appearance, structure, assigning memory, checking and accepting stand of the TOKEN in the Guangzhou metro AFC system. It emphasizes some key technologies in application of the TOKEN.
从广州地铁自动售检票系统单程票TOKEN的芯片选型、外形、结构、存储空间规划、验收标准等几个方面进行介绍，并阐述了TOKEN在应用过程中需关注的技术关键。 - Adiabatic Static Memory CMOS Circuits and Its Ability in Information Recovery
静态绝热CMOS记忆电路和信息恢复能力 - A single poly non-volatile memory cell structure implemented in a standard CMOS process is developed.
这里提出了一个基于标准CMOS工艺的单层多晶硅的非易失性存储器。 - The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。 - CMOS needs 16, and that RTD only needs 4.Using these characteristics, RTD can be widely used to multi-state memory, A/ D converter, multi-value logic, frequency divider, double frequency and so on.
利用这些特点，RTD可在多态存贮、A/D转换、多值逻辑、分频、倍频等方面得到广泛的应用。 - The memory device is toward miniaturization, high-storage density, low-power consumption, rapid writing/ reading speed, long-time date retention, compatible with the CMOS process and so on.
存储器正朝着小型化、存储密度高、功耗低、读写速度快、数据保持时间长、与CMOS工艺兼容等我们所希望的方向发展。 - Advanced technologies, such as dynamic CMOS decoder which using SCL ( source-coupled-logic) circuits, pulse signal technology, latch type voltage sense amplifier, power gating, memory array segmentation are used in the design.
设计中采用了SCL（source-coupled-logic）结构的动态CMOS译码电路、脉冲信号技术、锁存型电压灵敏放大器、PowerGating、存储阵列分割等先进技术。 - The size limit of CMOS circuits and the memory wall problem are significant challenges confront the development of computer as well as the increasing of computing efficiency.
CMOS电路面临的工艺尺寸极限以及存储墙问题，是当前制约计算机发展与计算效率提高的瓶颈。 - Based on these properties, Nano-Crystal Memory ( NCM) further improves the storage density. And owing to its good compatibility with CMOS process, NCM shows a great scientific and industrial value.
在此基础上发展而来的纳米晶存储器（Nano-CrystalMemory，NCM）进一步提高了存储密度，加上与CMOS工艺良好的兼容性，使得对纳米晶存储器的研究具有巨大的科学和产业价值。 - Phase change memory is one of the most promising candidates of the next-generation nonvolatile memory considering its high speed, low power consumption, high density, anti-fatigue properties, compatibility with the CMOS process, anti-radiation, and other characteristics.
相变存储器以其读写速度快、功耗低、存储密度高、抗疲劳特性好、与CMOS工艺兼容、抗辐射等特点成为下一代非易失性存储器的有力竞争者。 - Because of high speed, low power consumption, and good compatibility with traditional CMOS processes, Resistive Random Access Memory ( RRAM) is considered as one of the strongest competition of the next generation NVM.
其中，阻变存储器以其速度快、功耗低、与传统CMOS工艺相兼容等特点，被认为是下一代非挥发性存储器的有力竞争者。